硼硅玻璃与硅阳极键合机理及其界面微观结构分析  

Microstructure and mechanisms of the interface between borosilicate glass and silicon by anodic bonding

作　　者：秦会峰[1] 杨立强 孟庆森[3] 

机构地区：[1]山西机电职业技术学院机械工程系,山西长治046100 [2]山西北方惠丰机电有限公司计量中心,山西长治046012 [3]太原理工大学材料科学与工程学院,山西太原030024

出　　处：《兵器材料科学与工程》2009年第1期13-16,共4页Ordnance Material Science and Engineering

基　　金：国家自然科学基金项目(50375105)

摘　　要：为提高玻璃与硅的阳极键合技术在微电子制造和封装过程中的稳定性,对硼硅玻璃与硅进行了阳极键合试验,通过工艺试验,从固态热力学角度分析键合温度和电压对硅/玻璃键合质量的影响;通过扫描电镜对硅/玻璃键合界面的微观结构进行分析,认为键合温度和界面区的强电场是形成界面过渡层的主要因素,界面过渡层的形成促进了硅/玻璃的永久键合。For the stability improvement of anodic bonding in the field of MEMS fabrication and sealing, anodic bonding of borosilicate glass/silicon was achieved, the influencing factors of bonded quality such as bonding temperature and voltage were analyzed based on the thermodynamic of the solid material. The microstructure of the bonding interface was analyzed by SEM. It indicates that a transitional layer is formed at the bonding interface of borosilicate glass and silicon. It is assumed that bonding temperature and heavy electric field are the main reasons of the formation of the interfacial transitional layer. The formation of the transitional layer accelerates the interfacial bonding of borosilicate glass/silicon.

关 键 词：阳极键合 硼硅玻璃 硅 过渡区 

分 类 号：TG453[金属学及工艺—焊接]