蒸镀法制备ZnS光学薄膜研究  

Preparation of ZnS Optical Thin Films by Vacuum Evaporation

作　　者：黄剑锋[1] 王艳[1] 曹丽云[1] 吴建鹏[1] 贺海燕[1] 

机构地区：[1]陕西科技大学,陕西西安710021

出　　处：《稀有金属材料与工程》2009年第A01期490-492,共3页Rare Metal Materials and Engineering

基　　金：教育部新世纪优秀人才支持计划(NETC-06-0893);陕西科技大学研究生创新基金

摘　　要：采用真空蒸镀法在Si(111)基板上制备了ZnS光学薄膜,并系统研究了蒸发温度、沉积时间、基板距蒸发源的位置等因素对所制备薄膜物相及显微结构的影响。用X-射线衍射(XRD)、原子力显微镜(AFM)对制备的薄膜进行了表征。结果表明:制备薄膜的物相主要以β-ZnS闪锌矿(Sphalerite)为主,并有少量的α-ZnS纤锌矿(Wurtzite),薄膜具有(111)结晶取向的生长特征。当沉积温度为1200℃时,所制备薄膜的结晶性能较好,随沉积时间延长,薄膜的结晶性能降低。ZnS thin films were prepared on Si（111） substrate using a vacuum evaporation process. The factors of preparing the thin film such as evaporation temperature, deposition time and the distance between substrate and evaporation source were systematically studied. Samples as-prepared were characterized by X-ray diffraction （XRD） and atomic force microscopy （AFM）. Results show that the structure of prepared ZnS thin film is composited mainly of β-ZnS （Sphalerite） and a little amount of α-ZnS （Wurtzite）; the deposited thin film has an obvious crystal orientation along （11 l） direction; at the temperature of 1200 ℃, films with good crystalline performance were obtained; with the evaporation time prolonging the crystallization performance of ZnS thin films decreased.

关 键 词：ZNS薄膜 真空蒸镀法 蒸发温度 

分 类 号：O484.41[理学—固体物理]