Be基Ⅱ-Ⅵ族四元合金对蓝绿激光器发光层载流子的限制作用  

Carrier Confinement of Be based Ⅱ Ⅵ Quaternaries in Active Region of Diode Laser

作　　者：王善忠[1,2] 何力[1,2] 沈学础[1,2] 

机构地区：[1]中国科学院上海技术物理研究所 [2]半导体薄膜材料研究中心及红外物理国家重点实验室

出　　处：《Journal of Semiconductors》1998年第7期481-488,共8页半导体学报（英文版）

基　　金：国家杰出青年基金;上海市应用物理中心资助

摘　　要：ＺｎＳｅ基激光器的退化缺陷（特别是层错缺陷）严重地影响了长寿命器件的获得．人们开始将注意力投向离子性较低的Ｂｅ基化合物，希望Ｂｅ的加入能有效地改善器件的性能．由于对Ｂｅ基化合物的了解十分有限，本文从基本的原子参数出发，用原子轨道线性组合（ＬＣＡＯ）方法计算了Ｂｅ－Ⅵ化合物及其他Ⅱ－Ⅵ族化合物价带的ｏｆｓｅｔ．结合带隙的实验值，给出了Ⅱ－Ⅵ族化合物导带的ｏｆｓｅｔ．粗略分析了Ｂｅ基二元化合物用于ＺｎＳｅ载流子限制的可能性．根据虚晶近似，用插值方法计算了Ｂｅ基四元合金相对于ＺｎＳｅ价带、导带的ｏｆｓｅｔ．讨论了Ｂｅ基四元合金用作活性层和载流子限制层的可能性．Abstract Starting from the basic parameters of component atoms, the valence band offsets of all Ⅱ Ⅵ compounds including Be Ⅵs have been calculated in a LCAO (linear combination of atomic orbitals) scheme. The conduction band offsets have also been given with the adoption of the experimental values of energygap. According to the above results of band offset, we analyze briefly the possibilities of using Ⅱ Ⅵ binaries as carrier (electron and hole) confinement layers to ZnSe active layers. Mainly, the covalence and conduction band offsets, relative to ZnSe, of Be based quaternaries lattice matched to GaAs substrate have been calculated by an interpolation under the pseudocrystal approximation. Comparing and contrasting the theoretical results of all the quaternaries, we point out the possibilities of Be based quaternaries adopted as carrier confinement layers and active layers. We find, four of A 1- x B x C 1- y D y such as BeMgSTe, ZnMgSTe, ZnMgSSe, BeMgSSe and two of A 1- x-y B x C y D as MgCdBeS, ZnCdMgS are suitable for the application to blue/green laser diodes.

关 键 词：化合物半导体 四元合金 蓝绿激光器 载流子限制 

分 类 号：TN304.25[电子电信—物理电子学] TN248.1