Si晶体中Cu和Fe杂质在Frank型位错上的不同沉淀行为  

Precipitation of Cu and Fe Impurities on Dislocations in Czochralski Grown Silicon

作　　者：沈波[1] 陈鹏[1] 陈志忠 张荣 施毅 关口隆史[2] 角野浩二 

机构地区：[1]南京大学物理系固体物理研究所 [2]东北大学材料科学研究所

出　　处：《Journal of Semiconductors》1998年第7期489-492,共4页半导体学报（英文版）

摘　　要：本文运用电子束感应电流技术和透射电子显微镜研究了直拉Ｓｉ单晶中Ｃｕ和Ｆｅ杂质在Ｆｒａｎｋ型位错上的沉淀行为．发现尽管在Ｓｉ中Ｃｕ杂质浓度远高于Ｆｅ杂质，但Ｃｕ杂质不沉淀在Ｆｒａｎｋ型位错上，而Ｆｅ杂质会沾污Ｆｒａｎｋ型位错．研究结果表明，样品中微小Ｐｕｎｃｈｅｄ－ｏｕｔ位错的存在和Ｃｕ杂质在Ｓｉ中的重复成核机制是Ｃｕ杂质不沉淀在Ｆｒａｎｋ型位错上的主要原因．Abstract Precipitation of Cu and Fe impurities on Frank type partial dislocations in Czochralski grown silicon are investigated by means of the electron beam induced current (EBIC) technique and transmisson electron microscopy (TEM). It is found that Cu does not precipitate on Frank partials, while Fe decorates them, although the concentration of Cu is much higher than that of Fe in the specimens. It is supposed that the repeated nucleation mechanism of Cu precipitation in Si and the minute punched out dislocations existing in the specimens make Cu impurities not to decorate Frank partials even at atomic level.

关 键 词：硅 铜 铁 金属杂质 沉淀 

分 类 号：TN304.12[电子电信—物理电子学] TN304.05