用于日盲波段的MgZnO薄膜材料和紫外探测器  

Mg_xZn_(1-x)O thin film and UV detector for solar-blind wavelength

作　　者：张吉英[1] 蒋大勇[1] 鞠振刚[1] 申德振[1] 姚斌[1] 范希武[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春130033

出　　处：《中国光学与应用光学》2008年第1期80-84,共5页Chinese Optics and Applied Optics Abstracts

基　　金：国家自然科学基金重点项目(No.50532050);中国科学院知识创新工程重要方向项目(KJCX3.SYW.W01);国家重点基础研究发展计划973计划课题(2006CB04906;2008CB317105)

摘　　要：考虑ZnO优秀的物理和化学性能以及由于生长温度低而具有更低的缺陷密度从而易于实现高的光电器件效率等特点,本文采用射频磁控溅射和金属有机化学汽相沉积(MOCVD)方法在石英及蓝宝石衬底上生长了立方结构MgZnO薄膜,制备了MgZnO的MSM型紫外探测器。该器件实现了在日盲(太阳盲)波段的光响应,典型的光响应峰值分别在225和250 nm,截止边为230和273 nm。Mgx Zn1-x O is a promising material for developing solar-blind ultraviolet （UV） photodetectors. However, the control of the MgZnO quality and the phase separation with increase of Mg in Mgx Zn1-x O alloy is still a difficult problem. Up to now, no reports that the cutoff wavelength is at 273 nm have been found for the photodetectors based on MgZnO films. In this paper, cubic Mgx Zn1-x O thin films are grown on quartz and sapphire substrates by Radio Frequency （RF） magnetron sputtering and Metal Organic Chemical Vapour Deposition （MOCVD）. The Metal-Semiconductor-Metal （MSM） structured MgZnO photodetectors are fabricated based on the films. Results from spectral analysis shows that the photodetector exhibits a peak response wavelength at 225 nm with a cutoff wavelength of 230 nm, and the cubic phase MgZnO alloy with 255 nm absorption edge is finished by LP-MOCVD and the MSM devices exhibit the peak energy at 250 nm with cutoff wavelength of 273 nm, which lies in the solar-blind spectrum range（220 -280 nm）.

关 键 词：MgZnO薄膜 射频磁控溅射 金属有机化学汽相沉积 日盲紫外探测器 

分 类 号：TN304.21[电子电信—物理电子学] TN23