激光CVD制备SnO_2薄膜的结构及其反应机理研究  

Study of Structure and Reaction Mechanism of SnO 2 Thin Films Prepared by Excimer Laser Assisted CVD

作　　者：戴国瑞[1] 姜喜兰[1] 南金[1] 张玉书[1] 

机构地区：[1]吉林大学电子工程系

出　　处：《Journal of Semiconductors》1998年第6期427-430,共4页半导体学报（英文版）

摘　　要：采用ＳｎＣｌ４和Ｏ２为反应源，ＡｒＦ准分子激光ＣＶＤ生长ＳｎＯ２薄膜，利用ＸＲＤ、ＵＶＴ、ＸＰＳ研究了薄膜的组成和结构，实验表明ＳｎＯ２薄膜属于四方晶系、金红石结构，薄膜的紫外可见光透射率大于９０％，吸收边波长为３５５ｎｍ，禁带宽度为３．４９ｅＶ。最后。Abstract ArF excimer laser assisted chemical vapour deposition tin oxide thin films were obtained by using SnCl 4 and O 2 as the precursors. The composition and structure of the thin films were investigated by means of XRD, UVT and XPS. It is shown that the SnO 2 thin films belong to a tetragonal rutile structure. The ultraviolet visible transmittance of the SnO 2 thin films is above 90%. The absorption edge is 355nm and the energy gap is 3 49eV. Reaction mechanism of the SnO 2 thin film is discussed.

关 键 词：二氧化锡 激光CVD技术 半导体薄膜技术 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055