MCT最大可关断电流的解析分析  

Analysis of MCT for Its Maximum Turn Off Current

作　　者：周宝霞 陈治明[1] 

机构地区：[1]西安理工大学电子工程系

出　　处：《Journal of Semiconductors》1998年第6期442-446,共5页半导体学报（英文版）

摘　　要：通过对ＭＣＴ关断存贮期电流分布及变化的动态分析，利用电荷控制原理推导出ＭＣＴ最大可关断电流的解析表达式，并且同利用通用器件模拟软件对同一器件进行的数值分析结果进行对比。Abstract Based on analysis of the instantaneous current distribution in p base region during the storage period of MCT, an analytical formula is derived in the view point of the charge controlled principle to express its maximum turn off current. The formula relates the maximum turn off current of MCT to the emitter width, length, p base sheet resistance and OFF FET channel resistance. The analysis is verified by a comparison with the results of numerical simulation for the same device.

关 键 词：功率半导体器件 MCT 最大可关断电流 

分 类 号：TN303[电子电信—物理电子学]