掺施主杂质半导体中LO声子的反对称光电导响应的Monte Carlo模拟  

Monte Carlo Simulation for Photoconductivity Response of LO Phonon in Shallow Donor Doped Semiconductors

作　　者：陈张海[1] 陈忠辉[1] 刘普霖[1] 石晓红[1] 史国良[1] 胡灿明[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《Journal of Semiconductors》1998年第6期447-451,共5页半导体学报（英文版）

摘　　要：本文基于一个伴随ＬＯ声子发射的光激发电子被重新俘获的物理模型，采用ＭｏｎｔｅＣａｒｌｏ方法，对掺施主杂质的半导体光电导谱中与ＬＯ声子相对应的反对称谱峰结构进行了理论模拟，并与Ｓｉ掺杂的ＧａＡｓ及ＩｎＰ的实验结果作了比较．Abstract Based on the physical model of the photoexcited electrons being recaptured by the ground state of the hydrogenic donors when a LO phonon is emitted, Monte Carlo simulation of the asymmetric photoconductivity structure situated at the energy position of LO phonon in shallow donor doped semiconductors is reported in this paper. The good agreement between the theoretical result and the experimental data of Si doped GaAs and InP indicates that our model is reliable.

关 键 词：LO声子 掺杂 半导体 光电导响应 

分 类 号：TN305.3[电子电信—物理电子学]