用超短光脉冲测量半导体微波器件的S参数  

Sparameters Measurement of Semiconductor Microwave Devices byUltrashort Optical Pulses

作　　者：袁树忠[1] 潘家齐[1] 吕福云[1] 范万德[1] 李献元 

机构地区：[1]南开大学现代光学研究所国家教委光学信息技术科学开放实验室

出　　处：《中国激光》1998年第6期495-499,共5页Chinese Journal of Lasers

基　　金："863"计划光电子主题;国家自然科学基金

摘　　要：描述了用超短光脉冲测量微波器件Ｓ参数的基本原理和建立的测量系统。用该系统测量了频率高达３６ＧＨｚ器件的Ｓ参数，并同网络分析仪的测量结果进行了比较，一致性很好。该系统测量频率可达１００ＧＨｚ。The principle to measure S parameters of microwave devices with ultrashort optical pulses has been described. The measuring system with a maximum frequency up to 100 GHz has been developed. We have measured the devices with a frequency of 36 GHz. The results agree well with those measured by using a network analyzer.

关 键 词：超短光脉冲 光导开关 S参数 半导体微波器件 

分 类 号：TN385.07[电子电信—物理电子学]