Growth and Electronic Application of p-Undoped Freestanding Diamond Film  

作　　者：黄健 刘健敏 王林军 徐闰 史伟民 夏义本 

机构地区：[1]School of Materials Science and Engineering,Shanghai University [2]Jingdezhen Ceramic Institute

出　　处：《Plasma Science and Technology》2009年第3期302-306,共5页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China (No.60877017);Program for Changjiang Scholars and Innovative Research Team in University of China (No.IRT0739);Shanghai Leading Academic Disciplines (S30107);the Innovation Program of Shanghai Municipal Education Commission of China (08YZ04)

摘　　要：P-type undoped freestanding diamond （FSD） films were grown by the microwave plasma chemical vapor deposition （MPCVD） method. The effects of the hydrogen plasma treat- ment and annealing process on the p-type behavior of FSD films were investigated by the Hall effect method. The results revealed that the sheet carrier concentration increased and the sheet resistivity decreased with the treating time and a stable value was achieved after a period of time. Up to an annealing temperature of 250℃, the sheet resistivity and sheet carrier concentration remained in a relatively stable range but changed dramatically after annealing at 300℃. A heterojunction was also fabricated by the growth of an n-type ZnO film on the p-type FSD film. Current-voltage （I-V） characterization of the heterojunction at room temperature indicated that this structure was rectifying in nature with a turn-on voltage of about 0.6 V.P-type undoped freestanding diamond （FSD） films were grown by the microwave plasma chemical vapor deposition （MPCVD） method. The effects of the hydrogen plasma treat- ment and annealing process on the p-type behavior of FSD films were investigated by the Hall effect method. The results revealed that the sheet carrier concentration increased and the sheet resistivity decreased with the treating time and a stable value was achieved after a period of time. Up to an annealing temperature of 250℃, the sheet resistivity and sheet carrier concentration remained in a relatively stable range but changed dramatically after annealing at 300℃. A heterojunction was also fabricated by the growth of an n-type ZnO film on the p-type FSD film. Current-voltage （I-V） characterization of the heterojunction at room temperature indicated that this structure was rectifying in nature with a turn-on voltage of about 0.6 V.

关 键 词：freestanding diamond HETEROJUNCTION MPCVD ZNO 

分 类 号：O484.1[理学—固体物理]