GaAs基短周期InAs／GaSb超晶格红外探测器研究  

SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES

作　　者：郭杰[1,2] 彭震宇[2] 鲁正雄[2] 孙维国[1,2] 郝瑞亭[3] 周志强[3] 许应强[3] 牛智川[3] 

机构地区：[1]西北工业大学材料学院,陕西西安710072 [2]洛阳光电技术发展中心,河南洛阳471009 [3]中科院半导体研究所,北京100083

出　　处：《红外与毫米波学报》2009年第3期165-167,228,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金资助项目(60607016,60625405)

摘　　要：采用分子束外延(MBE)方法,在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb(2ML/8ML)和InAs/GaSb(8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2和57.3.室温红外透射光谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触,制备了短波和中波的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试,77K下,50%截止波长分别为2.1μm和5.0μm,黑体探测率Db*b均超过2×108cmHz1/2/W.室温下短波探测器Db*b超过108cmHz1/2/W.Two type Ⅱ superlattices （SLs） ： InAs（2ML）/GaSb（8ML） and InAs（8ML）/GaSb（8ML） were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the periods of the two SLs were 31.2A and 57. 3A, respectively. Room-temperature optical transmittance spectra showed that there were clear absorption edges at 2. 1 μm and 5 μm for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The spectral response and blackbody tests were carried out at low and room temperatues. The results show that the 50% cutoff wavelengths of the two photoconductors are 2.1 μm and 5.0 μm respectively and Dbb^＊ is above 2 × 10^8 cmHz^1/2/W for two kinds of photoconductors at 77K. Dbb^＊ is above 10s cmHz^1/2/W for SWIR photoconductor at room temperature.

关 键 词：超晶格 InAs/GaSb红外探测器 分子束外延 光谱响应 

分 类 号：TN304[电子电信—物理电子学]