Effect of a step quantum well structure and an electric-field on the Rashba spin splitting  

作　　者：郝亚非 陈涌海 郝国栋 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第6期11-14,共4页半导体学报（英文版）

基　　金：supported by the State Key Development Program for Basic Research of China (Nos. 2006CB921607, 2006CB604908);the National Natural Science Foundation of China (No. 60625402)

摘　　要：Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

关 键 词：Rashba effect step quantum wells electric field INTERFACE 

分 类 号：O471.1[理学—半导体物理]