A novel method using SiNW to measure stress in cantilevers  

作　　者：姜岩峰 王建平 

机构地区：[1]Microelectronic Center, College of Information Engineering, North China University of Technology [2]Department of Electrical and Computer Engineering, University of Minnesota

出　　处：《Journal of Semiconductors》2009年第6期72-75,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 60876078);the Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality (No. PHR(IHLB));the Beijing Novel Research Star funded by the Ministry of Beijing Science and Technology (No. 2005B01)

摘　　要：A silicon（SiNW） nanowire device,made by the bottom-up method,has been assembled in a MEMS device for measuring stress in cantilevers.The process for assembling a SiNW on a cantilever has been introduced.The current as a function of the voltage applied to a SiNW have been measured,and the different resistances before and after cantilever releasing have been observed.A parameter,η,has been derived based on the resistances.For a fixed sample,a linear relationship between η and the stress in the cantilever has been observed;and,so,it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.A silicon（SiNW） nanowire device,made by the bottom-up method,has been assembled in a MEMS device for measuring stress in cantilevers.The process for assembling a SiNW on a cantilever has been introduced.The current as a function of the voltage applied to a SiNW have been measured,and the different resistances before and after cantilever releasing have been observed.A parameter,η,has been derived based on the resistances.For a fixed sample,a linear relationship between η and the stress in the cantilever has been observed;and,so,it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.

关 键 词：SiNW STRESS CANTILEVER MEMS 

分 类 号：O611.3[理学—无机化学]