基于MEDICI的CMOS反相器SEL特性分析  

Analysis of the SEL Characteristic of CMOS Inverter Based on MEDICI

作　　者：汪俊[1,2] 师谦[2] 邓文基[1] 

机构地区：[1]华南理工大学微电子所,广东广州510640 [2]电子元器件可靠性物理及其应用技术国家级重点实验室,广东广州510610

出　　处：《电子质量》2009年第6期32-35,共4页Electronics Quality

摘　　要：文章利用计算机模拟的方法分析了不同衬底CMOS反相器的单粒子闩锁(SEL)特性,分别对不同衬底CMOS反相器在电极分布和输出不同的情况下进行了研究,首先在不同电极分布时,通过电闩锁对器件进行模拟,得出不同电极分布时器件的维持电压,然后进行SEL模拟,根据模拟结果,我们发现在维持电压最小的电极分布情况下,粒子入射到阱-衬底结时,输出低电平时,器件产生闩锁后N衬底器件比P衬底器件闩锁电流大,输出高电平时,器件产生闩锁后P衬底器件比N衬底器件的闩锁电流大。通过对不同衬底器件SEL阈值的测试,我们得到N衬底器件比P衬底器件对SEL敏感,器件输出高电平时比输出低电平对SEL略敏感。This articie analyzed the SEL characteristic of CMOS inverter in different substrata types through computer simulation method. We researched the CMOS inverter at substrate types, Output and distribution of electrodes. First we carry out electric latch-up simulation at different distribution of electrodes, we obtained the sustaining voltage of CMOS inverter at different distribution of electrodes. Then we carry out computer simulation of SEL. we find when particle incident on the junction of well-substrate and at the condition of minimum sustaining voltage, the latch-up current is larger in n-substrata device when the output is low level, but when the out-put is high level, the result is opposited. Through testing device SEL threshold at different substrata types, we come to a conclusion that n-substrata device is more sensitive to SEL than p-substrata device, the device will be more sensitive when the output is high level.

关 键 词：单粒子闩锁 线能量传输 闩锁效应 

分 类 号：TN432[电子电信—微电子学与固体电子学]