HIT太阳电池的单晶硅表面腐蚀工艺的研究  

Monocrystalline Silicon Surface Etching Process for HIT Solar Cells

作　　者：曾祥斌[1] 宋志成[1] 宋佩珂[1] 王慧娟[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《半导体光电》2009年第3期392-395,共4页Semiconductor Optoelectronics

基　　金：国家"863"计划项目(2006AA05Z406)

摘　　要：对用于HIT太阳电池的单晶硅要求有良好的界面特性,而且要求单晶硅衬底的厚度比较薄。采用各向异性腐蚀的方法制得了具有绒面结构的单晶硅衬底。腐蚀时间为40 min时,能够得到表面反射率最低的界面,平均反射率为10.9%,同时也具有规则的金字塔结构,且厚度满足制作HIT太阳电池的要求,在250μm左右。还研究了用各向同性腐蚀的方法来减薄硅片,具有较高的腐蚀速率。The monocrystalline silicon for HIT solar cells should be good interface features and thin substrate. The monocrystalline silicon substrate with textured structure is fabricated by anisotropic etching for 40 min. The interface with the lowest surface reflectivity and a regular pyramid structure is obtained, and the average reflectivity is 10.9%. Further more, its thickness is about 250 μm that fits for HIT solar cells. Also investigated is the method of isotropic etching for thinning monocrystalline silicon substrate.

关 键 词：HIT 各向异性腐蚀 绒面结构 

分 类 号：TM914.4[电气工程—电力电子与电力传动]