LaB_6场发射阵列牺牲层制备工艺  

Fabrication technology of sacrificial layer in LaB_6 field emission arrays

作　　者：代令[1] 祁康成[1] 林祖伦[1] 陈文彬[1] 李东方[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《强激光与粒子束》2009年第6期923-926,共4页High Power Laser and Particle Beams

基　　金：国防科技基础研究基金资助课题

摘　　要：分析了传统牺牲层材料铝在制备LaB6场发射阵列时存在的问题,利用溅射及热蒸发工艺依次制备铝膜和氧化锌膜,制备出了一种新型的牺牲层——ZnO-A1复合牺牲层,并对所制备的阵列进行了测试。实验结果表明:ZnO一A1复合牺牲层能够有效地解决电化学腐蚀的问题,所制备出的LaB6场发射阵列尖锥保持了完好的形貌,其发射特性也达到了最初制备场发射阵列的要求,说明ZnO-A1复合牺牲层是作为LaB6场发射阵列牺牲层的理想材料。This paper analyzes the localization of traditional sacrificial layer material aluminum and brings forward a new sacrificial layer-ZnO-Al complex sacrificial layer. By means of sputtering to prepare aluminum film and evaporating to prepare zincoxide film, field emission arrays are fabricated and then tested. The result indicates that ZnO-Al complex sacrificial layer can solve the problem of electrochemistry, the LaBs field emission array tips with ZnO-Al layer are in good condition and the array maintains field emission characteristics.

关 键 词：六硼化镧 场发射 牺牲层 溅射 ZnO-Al 

分 类 号：TN105[电子电信—物理电子学]