65—90nm技术节点的WCA模型和提取算法  

Efficient WCA algorithm for 65—90 nm processes

作　　者：王俊平[1] 郝跃[2] 

机构地区：[1]西安电子科技大学通信工程学院,西安710071 [2]西安电子科技大学微电子学院,西安710071

出　　处：《物理学报》2009年第6期4267-4273,共7页Acta Physica Sinica

基　　金：西安应用材料创新基金(批准号:XA-AM-200601);西安市科技计划(批准号:CXY08018-1)资助的课题~~

摘　　要：在90nm和65nm技术节点,集成电路制造业的投资剧增而随机成品率却在下降低.为了提升随机成品率,带权关键面积的(WCA)计算和排序是关键.文中基于数学形态学提出了一种随机缺陷轮廓的WCA新模型,该模型不仅考虑了90nm和65nm工艺中缺陷在布线区域和空白区域的不同密度,而且也考虑了缺陷在粒径上的分布特性;同时还设计并实现了与新模型对应的WCA提取与排序算法,部分版图上的实验结果表明新WCA可以作为版图优化的代价函数,从而为随机缺陷的版图优化提供了精确依据.For modern processes at 90 nm and 65 nm technology nodes, the random yield loss can contribute much to the total yield loss. Hence, it is essential to calculate the critical area to analyse the areas of design, and make changes to improve the random yield. This study provides a novel weighted critical area （WCA） of arbitrary defect outline, which takes into account the clustering effect in the metal and empty regions of the chip as well as the size distribution of random defects. Then, two fast and accurate algorithms related-WCA extraction and its sort of WCAs are implemented, which can sever as a cost function of layout optimization for the random yield improvement.

关 键 词：缺陷空间分布 缺陷粒径分布 关键面积 版图优化 

分 类 号：TN405[电子电信—微电子学与固体电子学]