Co掺杂量对ZnO薄膜结构及光学特性的影响  

Structural and photoluminescent properties of Zn_(1-x)Co_xO thin film

作　　者：温晓莉[1] 陈钊[2] 陈长乐[2] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072 [2]西北工业大学理学院,陕西西安710072

出　　处：《功能材料》2009年第6期892-895,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50331040)

摘　　要：采用脉冲激光沉积法(PLD)在SiO2衬底上成功制备了具有c轴择优生长特性的Zn1-xCoxO(x=0.05、0.1、0.2、0.3)系列薄膜。通过X射线衍射和能谱仪研究了Co掺杂量对薄膜晶体结构和成分的影响;同时利用光致发光谱(PL)和透过率研究了薄膜的光学特性。结果表明,当掺杂浓度为10%时,薄膜生长最好,c轴择优生长最为显著;Co元素的掺入改变了薄膜的紫外、绿光和蓝光发射,分析认为主要是Co元素的掺入量改变了薄膜的禁带宽度、氧错位缺陷浓度和锌填隙缺陷的浓度;Co元素掺杂浓度为5%时,薄膜的透过率超过90%。此外,探讨了不同波段光发射的可能机理。Zn1-xCoxO thin films were deposited on the SiO2 substrates by the pulse laser deposition. The thin films microstructure were investigated by X-ray diffractometer（XRD） ,composition were investigated by EDS. It is indicated all the thin films have obviously c-axis oriented grains dominate. Photoluminescence was measured at room temperature, when doping concentration are high, thin film emission are varied,and its quality and defects was affected. In addition, the diaphaneity of Co doped ZnO thin film were also studied, discovered the highest thin film transmittance is up to 90%. And along with doping quantity increasing, thin films transmittance reduce. Believed that it connect with the thin film＇s defections.

关 键 词：Zn1-xCoxO薄膜 掺杂浓度 光致发光 PLD 

分 类 号：O472.3[理学—半导体物理] O482.31[理学—物理]