大功率980 nm InGaAs/InGaAsP/InGaP激光器热特性  

Thermal Property of High Power 980 nm InGaAs/InGaAsP/InGaP Laser Diodes

作　　者：裘利平[1] 郭伟玲[1] 罗丹[1] 崔碧峰[1] 张蕾[1] 沈光地[1] 

机构地区：[1]北京工业大学北京光电子技术实验室,北京100022

出　　处：《中国激光》2009年第6期1356-1359,共4页Chinese Journal of Lasers

基　　金：国家863计划(SQ2007AA03Z431230)资助课题

摘　　要：利用低压金属有机化学气相沉积(LP-MOCVD)生长了无铝980 nm InGaAs/InGaAsP/InGaP单量子阱(SQW)激光器,测试了含铝的InGaAs/GaAs/AlGaAs和无铝的InGaAs/InGaAsP/InGaP两种不同材料的980 nmInGaAs SQW激光器在30～70℃范围内的P-I-V特性曲线,对比分析了两种材料系980 nm激光器输出光功率、阈值电流、斜率效率和激射波长随温度的变化,并对InGaAs/InGaAsP/InGaP激光器进行了可靠性实验。An aluminum-free InGaAs/InGaAsP/InGaP single quantum well （SQW） laser diode （LD） is grown by lowpressure MOCVD. The P-I-V characteristics of Al-free and Al-containing 980-nm InGaAs lasers are tested in temperature range of 30-70 ℃. The variations with temperature of the two different LDs＇ characteristic parameters, including output power, threshold current, slope efficiency, and the wavelength, are analyzed contrastively. The reliability experiments on the InGaAs/InGaAsP/InGaP laser diodes are also carried out.

关 键 词：激光器 大功率激光器 热特性 无铝 特征温度 

分 类 号：TN248.4[电子电信—物理电子学]