反馈光注入半导体激光器复合腔模的稳定性  

Stability Analysis for External Cavity Modes of Semiconductor Laser Subject to Optical Feedback

作　　者：王少卿[1,2] 王向朝[1] 步扬[1] 

机构地区：[1]中国科学院上海光学精密机械研究所信息光学实验室,上海201800 [2]中国科学院研究生院,北京100039

出　　处：《中国激光》2009年第6期1360-1365,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金(60578051);上海市科委基础研究重点项目(07JC14056)资助课题

摘　　要：利用渐进稳定性分析的方法研究了小注入电流条件下反馈光注入半导体激光器的复合腔模(ECM)的稳定性,并提出对应于所有的复合腔模在相空间内存在一个模式稳定区域,复合腔模出现在该模式稳定区域内的概率远大于出现在该模式稳定区域外。通过求解复合腔模的鞍结分岔及霍普夫分岔边界条件并计算载流子浓度的庞加莱截图,验证了模式稳定区域的存在。数值计算的半导体激光器载流子浓度的分岔图验证了在小注入电流条件下渐进分析的可靠性。The dynamics of semiconductor laser subject to optical feedback was studied analytically by the means of asymptotic analysis method. The stabilities of external cavity modes （ECMs） were analyzed, and the bifurcation boundaries of the ECMs were obtained. The stable regions of the ECMs are proposed and verified by numerically calculating the Poincare section of semiconductor laser carrier density. The bifurcation diagram of semiconductor laser carrier density at different effective injection currents was numerically calculated and the first Hopf bifurcation boundary was agrees with the first Hopf bifurcation boundary calculated by the asymptotic method under the low injection current conditions.

关 键 词：激光器 半导体激光器 反馈光注入 复合腔模 稳定区域 分岔 

分 类 号：TN248.4[电子电信—物理电子学]