基片温度对脉冲激光沉积ZnO薄膜性质的影响  

Affect of ZnO Thin Film of Pulsed Laser Deposition by Substrate Temperatures

作　　者：陈江博[1] 王丽[1] 苏雪琼[1] 刘红梅[1] 王荣平[2] 

机构地区：[1]北京工业大学应用数理学院,北京100124 [2]澳大利亚国立大学激光物理中心

出　　处：《中国激光》2009年第6期1539-1544,共6页Chinese Journal of Lasers

基　　金：北京市自然科学基金(4062008)资助课题

摘　　要：本文基于脉冲激光沉积(PLD)方法,利用光谱物理GCR-170型脉冲激光器Nd∶YAG的三次谐波,实验上完成了在Al_2O_3(0001)基片上生长了ZnO薄膜。利用原子力显微镜(AFM)、光致发光(PL)谱和光学透射谱对不同基片温度下沉积的ZnO薄膜的表面形貌和光学特性进行研究。结果表明,沉积时的基片温度对ZnO薄膜的结构和特性有显著影响。在基片温度为500℃时沉积的ZnO薄膜结构致密均匀,并表现出很强的紫外发射。通过紫外-可见透射光谱的测量,讨论了沉积时的基片温度对ZnO薄膜光学透射率的影响。In this paper, pulsed laser deposition method was applied to grow ZnO films in different temperature, with ZnO ceramics as target, sapphire Al2O3 （0001） for substrate, and using the pulsed laser GCR-170 Nd： YAG by Spectra-Physics. The thin film structure and superficial morphology quality have been researched in experiment by atomic force microscope （AFM）, photoluminescence （PL） and optical transmission spectrum, and optimize growth temperature was found to be 500 ℃ at which the ZnO films could obtain high-quality surface. The high violet light radiation have been found in experiment. The optical transmission spectrum versus the substrate temperature results showed that for the ZnO thin films prepared on sapphire, the surface morphology quality of the ZnO thin film was enhanced with increasing the substrate temperature from room temperature to 500 ℃.

关 键 词：材料 ZNO薄膜 脉冲激光沉积 表面形貌 光致发光 透射光谱 

分 类 号：O484[理学—固体物理]