一种结构简单的CMOS带隙基准电压源设计  

A simple CMOS Bandgap Reference Design

作　　者：周晏[1] 蒋林[1] 曾泽沧[1] 

机构地区：[1]西安邮电学院,陕西西安710061

出　　处：《微计算机信息》2009年第19期137-138,共2页Control & Automation

摘　　要：本文提出了一种结构简单高电源抑制比的CMOS带隙基准电压源,供电电源3.3V。采用CSMC 0.5um CMOS工艺。Spectre仿真结果表明,基准输出电压在温度为-40～+80℃时,温度系数为45.53×10-6/℃,输出电压在电源电压为2～5V范围内变化小。电源抑制比达到-73.3dB。This paper proposes a precise CMOS bandgap voltage reference with high power supply rejection ratio （PSRR）. The voltage supply is 3.3V. Using CSMC 0.5 um CMOS process, Spectre simulation shows that the average temperature coefficient is 45.53×10- 6/℃ in the rage of -40-80℃. The circuit also has change small when power supply vohage changes from 2-5V. The PSRR is the -73.3dB.

关 键 词：带隙基准 电源抑制比 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]