Ce^3＋注入对不同尺寸的nc-Si/SiO2超晶格发光特性的影响  

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO_2 Superlattices after Ce^(3+) Implantation

作　　者：杜玙璠[1] 衣立新[1] 王申伟[1] 邬洋[1] 

机构地区：[1]北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京100044

出　　处：《发光学报》2009年第3期417-420,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60577022)资助项目

摘　　要：通过电子束蒸发方法以及高温退火处理,得到nc-Si/SiO2超晶格。将样品分别注入剂量为2.0×1014cm-2和2.0×1015cm-2的Ce3+,再对其进行二次退火处理,获得多组样品。通过对样品光致发光光谱的分析发现,样品发光强度的变化不仅受到Ce3+注入剂量的影响,而且也受到nc-Si颗粒大小的影响。在相同注入计量和相同的二次退火处理温度下,nc-Si颗粒较大的样品经Ce3+注入后其发光强度增强较为明显。In this paper, SiO/SiO2 superlattices samples were prepared on Si substrates by electron beam evaporation, and the thicknesses of SiO layers are 2 nm and 4 nm, 4 nm for all the SiO2 layers. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then, Ce^3＋ with a dose of 2.0 ×10^14cm^-2and 2.0 ×10^15cm^-2 respectively was implanted into these samples with formed Si nanocrystals After Ce^3＋ doped, the samples were re-annealing at 600 ℃. The photoluminescence （PL） speetra were observed by the fluorescence spectrometry. The PL spectra showed that the PL intensities of samples were not only dependent on the re-annealing temperature and the dose of Ce^3＋ , but also dependent on the size of nc-Si. The experiment results proved that when the size of nc-Si is 4 nm; the effect of energy transfer between Ce^3＋ and nc-Si is more distinct

关 键 词：超晶格 硅纳米晶 Ce3+注入 光致发光 

分 类 号：O482.31[理学—固体物理]