基于低温共烧陶瓷技术的Ku波段低噪声放大器  

A Ku-band Low Noise Amplifier Based on LTCC Technology

作　　者：纪建华[1] 李殷乔[1] 周建明[1] 费元春[1] 

机构地区：[1]北京理工大学信息与电子学院,北京100081

出　　处：《固体电子学研究与进展》2009年第2期198-201,共4页Research & Progress of SSE

摘　　要：设计了一种基于低温共烧陶瓷（Low temperature co-fired ceramic）技术的Ku波段低噪声放大器。将低噪声放大器的MMIC芯片集成于LTCC基板中，利用三维全波电磁场软件设计和优化了LNA的无源模型，包括金丝、通孔阵列和多层地平面。金丝用来连接MMIC芯片和微带，通孔用来连接不同地平面。分析了两根平行金丝的”型等效模型并提取了该模型的参数，研究了通孔阵列的间距以得到良好的接地效果。为了得到LNA完整的仿真，将整个无源模型的电磁场数据导出到ADS软件中，并和MMIC芯片的S参数一起协同仿真，最终得到优化结果。测试结果表明该LNA在12～17GHz的频段内，具有40dB的增益，土1．215dB的带内平坦度，2．9dB的噪声系数。A Ku-band low noise amplifier based on LTCC （Low Temperature Co-Fired Ceramic） technology is developed in this paper. To integrate MMIC chips into LTCC substrates, a passive structure of the LNA including bonding wires, via holes array and multilayer ground planes is designed and optimized using 3D full-wave electromagnetic software, the bonding wires are used for interconnection from MMIC chips to microstrip lines and the via holes array are used for grounding between different ground planes. An equivalent π-type model for two-parallel bonding wires is analyzed and parameters of the model are extracted; the pitch of via holes array is studied to obtain good grounding performance. To implement an overall simulation of the LNA, EM （electromagnetic）-based data of the full passive structure are exported into ADS and co-simulation has been done with S parameter data of MMIC chips to achieve the final simulation. The measured results show the LNA has a 40 dB gain with a±1. 215 dB flatness and a 2.9 dB noise figure from 12 GHz to 17 GHz.

关 键 词：低噪声放大器 低温共烧陶瓷 建模 金丝 通孔阵列 

分 类 号：TN722.3[电子电信—电路与系统] TN405.97