C_(60)薄膜的离化团簇束沉积及离子掺杂  

IONIZED CLUSTER BEAM DEPOSITED C 60 FILMS AND THEIR DOPING

作　　者：傅德君[1] 雷园园[1] 李金钗[1] 叶明生[1] 彭友贵[1] 范湘军[1] 

机构地区：[1]武汉大学物理学系

出　　处：《武汉大学学报（自然科学版）》1998年第3期347-350,共4页Journal of Wuhan University(Natural Science Edition)

基　　金：国家自然科学基金

摘　　要：用离化团簇束（ＩＣＢ）沉积法在石英玻璃和云母衬底上形成了Ｃ６０薄膜，ＸＲＤ测试表明膜呈多晶结构，原位电阻测试表明膜的室温电阻率超过１０４Ωｃｍ，具有负的电阻温度系数．用８０ｋｅＶＰ＋，ＢＢｒ３＋，Ａｒ＋和Ｈｅ＋对Ｃ６０膜作剂量范围为０～１０１６ｃｍ－２的离子注入，Ｃ６０膜的电阻率随注入剂量增加而急剧下降，磷注入具有ｎ型掺杂作用，离子与Ｃ６０分子的相互作用导致Ｃ６０分子分裂，引起薄膜表面非晶化．We report polycrystalline semiconducting C 60 films prepared by ionized cluster beam deposition and ion implantation of the films using dopants as well as inert elements. The films showed room temperature resistivity over 10 4 Ω·cm and sharp decreases of the resistance upon ion implantation. Amorphization was observed for all implanted films, which was attributed to the disintegration of the C 60 molecules as a result of the ion C 60 interaction. We observed n type electrical conduction for phosphorus implanted C 60 films.

关 键 词：离化团簇束沉积 离子注入 原位测试 碳60 薄膜 

分 类 号：O484.1[理学—固体物理]