退火温度和β-FeSi2薄膜厚度对n-β-FeSi2/p-Si异质结太阳电池的影响  

Influence of Annealing Temperature and β-FeSi_2 Layer Thickness on the n-type β-FeSi_2/p-type Si Heterojunction Solar Cells

作　　者：郁操[1] 侯国付[1] 刘芳[2] 孙建[1] 赵颖[1] 耿新华[1] Yu, Cao[1]; Hou, Guo-Fu[1]; Liu, Fang[2]; Sun, Jian[1]; Zhao, Ying[1]; Geng, Xin-Hua[1]

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071 [2]河北工业大学信息工程学院,天津300401

出　　处：《人工晶体学报》2009年第3期662-665,676,共5页Journal of Synthetic Crystals

基　　金：天津市应用基础研究计划项目(No.07JCYBJC04000);国家重点基础研究发展计划项目(No.2006CB202602;2006CB202603);国家科技计划配套项目(No.07QTPTJC29500)

摘　　要：本文采用室温直流磁控溅射Fe-Si组合靶的方法,并通过后续退火温度的优化得到了单一相高质量的β-FeSi2薄膜。结果表明,在本实验条件下得到的未掺杂的β-FeSi2薄膜在室温下是n型导电的,其电学特性存在一个退火温度的最优点:800℃。而且在这个最佳温度点上,在Si(111)衬底上外延得到的薄膜载流子迁移率比在Si(100)上高出了一倍多。在上述研究的基础上,采用p-Si(111)单晶片作为外延生长β-FeSi2薄膜的衬底,并通过退火温度和薄膜厚度的优化制备出了国内第一个n-β-FeSi2/p-Si异质结太阳电池,其Jsc=7.90 mA/cm2,Voc=0.21V,FF=0.23,η=0.38%。Single-phase β-FeSi2 thin films with high quality was prepared by DC-magnetron sputtering Fe- Si mixed targets, followed by post-annealing. Single-phase n-type β-FeSi2 thin films have been successfully deposited without intentional doping, and 800 ℃ was the best annealing temperature. Moreover, the electron Hall mobility of the β-FeSi2 thin film on Si （ 111 ） substrate was two times as large as the one on Si （100） substrate. Based on the above investigation, by optimizing the annealing temperatures and the β-FeSi2 layer thickness, n-type β-FeSi2/p-type Si heterojunction solar cell was fabricated on p-type Si（ 111 ） crystalline silicon substrate, with Jsc of 7.90 mA/cm^2, Voc of 0.21 V, FF of 0. 23 and efficiency of 0. 38%.

关 键 词：β-FeSi2薄膜 直流磁控溅射 退火温度 异质结太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]