PECVD法制备硅太阳电池SiN薄膜工艺研究进展  

Overview on SiN Thin Film Prepared by PECVD for Silicon Solar Cell

作　　者：冯炜光[1,2] 刘翔[1] 储清梅[2,1] 张鹏翔[1] 

机构地区：[1]昆明理工大学光电子新材料研究所,云南昆明650031 [2]昆明理工大学真空冶金及材料研究所,云南昆明650093

出　　处：《云南冶金》2009年第3期36-39,共4页Yunnan Metallurgy

摘　　要：由于SiN薄膜具有SiO2、TiO2等薄膜无法相比的优点，越来越广泛地用做硅太阳电池减反射薄膜，对其制备工艺研究更深入。在总结最近的研究状况的基础上，提出了PECVD（Plasma enhanced chemistry vapor deposition）制备SiN薄膜的最佳工艺条件：衬衣温度在360℃左右，射频频率为13．56MHz，射频功率最好在30～20W的范罔，[Sill4：N2]／[NH11]的最佳流速比在4～7之间，退火温度350～400℃最合适，退火时间10s到10min。此外，在总结前人研究的基础上认为SiN薄膜中嵌入Si-ncs将会是提高太阳电池效率的一个方向，还有待于进一步研究。Silicon nitride （SiN） thin film is increasingly used within the crystalline silicon photovohaic industry as it has many excellences compared with SiO2 , TiO2 thin films etc, its fabrication technology using plasma enhanced chemistry vapor deposition （PECVD） has been investigated widely. This article presents an overview on the present status of SiN researches and summarizes the optimal technology parameters： the temperature of substrate is about 360℃ , the frequency of RF is 13.56MHz, the power of RF is between 30 - 200W, the optimal flow ratio of [ SiH4 ： N2 ] / [ NH3 ] is between 4 - 7, the annealing temperature is about 350℃ - 400℃ and the annealing time is10s to lOmin. Furthermore, this article suggests an idea of embedding silicon nanocrystals in SiN thin film to improve the photovohaic conversion efficiency, it would get more attention.

关 键 词：太阳电池 PECVD SiN薄膜 

分 类 号：TN[电子电信]