sol-gel法制备掺Al的ZnO薄膜及其表面形貌表征  

Characterization of surface morphology for Al-doped ZnO thin films prepared by sol-gel method

作　　者：戴结林[1] 

机构地区：[1]合肥师范学院物理与电子工程系,安徽合肥230061

出　　处：《电子元件与材料》2009年第7期33-35,共3页Electronic Components And Materials

基　　金：安徽省科技攻关计划资助项目(No.07020203009);安徽省高等学校省级自然科学研究资助项目(No.KJ2007B135)

摘　　要：用原子力显微镜,观察了sol-gel法制备之掺Al的ZnO薄膜的表面形貌,计算了薄膜的表面高度–高度相关函数H(r)-r,并用分形表面高度–高度相关函数的唯象表达式,对薄膜表面高度–高度相关函数进行拟合。结果表明:掺Al的ZnO薄膜表面具有典型的分形特征,Al掺杂量的增加和退火温度升高,使掺Al的ZnO薄膜的表面粗糙度w从1.39增大到5.47,分形维数Df由2.12减小到2.08,水平相关长度ξ从31.25增到76.17。Surface morphology of Al-doped ZnO thin films prepared by sol-gel method was observed by atomic force microscope. Height-height correlation function H（r） vs. position r for Al-doped ZnO thin films was calculated by means of height data of atomic force microscopy. Phenomenological formula of fractal surface was used to fit the height-height correlation function of thin films. The results show that surface morphology of the films has typic fractal character. As Al-doped amount increases and annealing temperature rises, the surface roughness w increases from 1.39 to 5.47, the fractal dimension Df decreases from 2.12 to 2.08 and the lateral correlation length ξincreases from 31.25 to 76.17.

关 键 词：ZNO薄膜 表面形貌 高度-高度相关函数 分形 

分 类 号：O484[理学—固体物理]