脉冲激光沉积制备NiO(111)外延薄膜及其结构研究  

Preparation of epitaxial NiO(111) thin films by pulsed laser deposition and the study on its morphology

作　　者：贝力[1] 朱俊[1] 赵丹[1] 郑润华[1] 李言荣[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2009年第7期36-38,共3页Electronic Components And Materials

基　　金："973"计划资助项目(No.61363)

摘　　要：采用脉冲激光沉积法(PLD)在具有六方纤锌矿结构的蓝宝石衬底上制备了NiO外延薄膜,研究了沉积温度、氧分压对薄膜结构和形貌的影响。在650℃、20Pa氧分压的条件下制得了高结晶质量的单晶NiO薄膜。高能电子衍射分析发现,该NiO薄膜沿Al2O3[11–20]方向入射的衍射图像为清晰的斑点,说明NiO薄膜的生长模式为岛状模式,薄膜与衬底的外延匹配关系为:(111)[11–2]NiO//(0001)[11–20]Al2O3。Epitaxial NiO（111） thin films were grown on hexagonal sapphire substrates by pulsed laser deposition. The effects of deposition temperature and oxygen partial pressure on the microstructure and morphology of prepared films were studied. Single crystal epitaxial NiO （111） films with high crystallization quality were successfully prepared at 650℃ under the oxygen partial pressure of 20 Pa. For the films prepared at 650℃, their RHEED pattern observed along the direction of Al2O3 [11-20] exhibits as clear spots, indicating that the growth mode of these films is island-by-island mode and the epitaxial matching relationship between such films and sapphire substrates is （111）[11-2] NiO // （0001） [11-20] Al2O3.

关 键 词：NiO薄膜 激光脉冲沉积法 外延匹配 蓝宝石衬底 

分 类 号：TN384[电子电信—物理电子学]