ZnO薄膜及ZnO-TFT的性能研究  

ZnO Films and Properties of ZnO-TFT

作　　者：马仙梅[1,2,3] 荆海[1,3] 马凯[1] 王龙彦[1,2,3] 王中健[1,2,3] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院研究生院,北京100049 [3]北方液晶工程研究开发中心,吉林长春130033

出　　处：《液晶与显示》2009年第3期393-395,共3页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.60576054,No.60576043,No.60576056,No.60786013);教育部新世纪优秀人才支持计划(No.05-0326);长春市科技局产业化项目(No.2006303)

摘　　要：采用MOCVD法在SiNx绝缘薄膜上生长了ZnO薄膜,通过X射线衍射与光致发光光谱表征了ZnO薄膜的质量。其结果是:XRD特征峰半高全宽0.176°,光致发光仅有381.1nm的发光峰,展现了ZnO薄膜光电特性的优势。制备了底栅型ZnO薄膜晶体管,测试表明器件具有明显的场效应特性及饱和特性。ZnO films were grown on SiNx/glass substrate by the method of MOCVD. The qualities of the ZnO films were characterized by XRD and photo luminescence spectra. The results indicated that the full width at half height of XRD intrinsic peak is 0. 176°, and there is only a peak at 381.1 nm in the PL spectra. Both results exhibit the preponderance of our ZnO films in their photoelectrieity charac-teristics. A bottom-gate-type ZnO-TFT was constructed successfully, and the measurements show that the device has an obvious field effect performance and a favorable saturation characteristic.

关 键 词：氧化锌薄膜晶体管 氧化锌薄膜 X射线衍射 光致发光 

分 类 号：TN304.21[电子电信—物理电子学] TN321.5