平面圆形磁控溅射靶枪的磁场分析  

Magnetic Field Analysis of Circular Plane Magnetron Sputtering Source

作　　者：屈宝鹏[1] 张喜凤[1] 

机构地区：[1]陕西国防工业职业技术学院,陕西西安710300

出　　处：《现代电子技术》2009年第13期202-203,207,共3页Modern Electronics Technique

摘　　要：磁控溅射靶枪中磁通量密度的横向分布情况对靶材的利用率、沉积薄膜的质量及磁控溅射过程的稳定性等都有重大的影响。利用有限元理论对靶表面磁通量密度的横向分量进行了模拟分析。同时,也使用高斯计对靶表面磁场强度的横向分布进行了实际测量。比较得知,模拟结果和实际测量结果在很高的精度上是一致的。这个结果对于优化磁控溅射靶枪的设计及提高膜层的特性等方面都具有很高的实用价值。The transverse component of magnetic flux intensity is pivotal that affect the utilization rate of target material and quality of deposition film as well as the instability of the sputtering process. The distribution of transverse component of magnetic flux intensity on the surface of the target is calculated by means of the finite element method. Furthermore, the experiment distribution of the transverse component on the target surface is gained by practical measurement with Gauss instrument. The simulation results are consistent with the practical measurement results accurately with a good precision. These results have important practical values in optimizing the design of magnetron sputtering target and improving the quality of thin films.

关 键 词：磁控溅射 有限元 横向分量 磁通量密度 

分 类 号：TB43[一般工业技术]