基于碳纳米管模板的氮化镓纳米线束合成(英文)  

Synthesis of Gallium Nitride Nanowire Bundles Using Carbon Nanotubes as Template

作　　者：严晗[1,2] 刘胜[1,2,3] 甘志银[2,3] 宋晓辉[2] 徐静平[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]武汉光电国家实验室微光机电系统研究部,武汉430074 [3]华中科技大学机械科学与工程学院,武汉430074

出　　处：《纳米技术与精密工程》2009年第3期191-194,共4页Nanotechnology and Precision Engineering

基　　金：国家高技术研究发展计划(863)项目(2007AA04Z348)

摘　　要：通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束.对所生长的纳米结构进行了扫描电镜和X射线能谱分析,结果显示氮化镓纳米晶体可以与碳纳米管形成纳米线束状复合物.纳米线束状复合物直径为100～200 nm,长度为1.5～2.5μm,纳米线的两端呈现尖角状.由于氨气很容易吸附在碳纳米管表面,可知所获得的纳米结构的初始生长机制为碳纳米管的表面氮化.该研究也证明金属有机物化学气相沉积将是用于制造化合物纳米结构材料的一项有效的技术.Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition （MOCVD） with carbon nanotubes as templates in this paper. The fabricated nanostructures were characterized by scanning electron microscopy （SEM） and energy dispersive X-ray spectroscopy （EDX）. The results reveal that gallium nitride nanocrystals are grown on carbon nanotubes in the form of composite nanowire bundles. The composite nanowire bundles are 100-200 nm thick with typical lengths of 1.5-2.5 μm, while there is a shape with a slight tapering toward the tip of the wire. The growth mechanism of the obtained nanostructures is initiated by nitridation of carbon nanotube surfaces, due to the fact that ammonia is easily adsorbed on carbon nanotube surface. MOCVD is also suggested to be an effective technology for the fabrication of compound nanostructure material in the future.

关 键 词：氮化镓纳米线 碳纳米管 金属有机物化学气相沉积 

分 类 号：TB383.1[一般工业技术—材料科学与工程]