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机构地区:[1]Institute of Mathematics, AMSS, Chinese Academy of Sciences,Beijing 100190, China [2]Department of Mathematics, Capital Normal University,Beijing 100037, China
出 处:《Acta Mathematica Scientia》2009年第3期552-568,共17页数学物理学报(B辑英文版)
基 金:L.H. is supported in part by the NSFC (10431060); H.L. is supported partially by the NSFC (10431060, 10871134);the Beijing Nova program (2005B48);the NCET support of the Ministry of Education of China, and the Huo Ying Dong Foundation (111033)
摘 要:The multi-dimensional quantum hydrodynamic equations for charge transport in ultra-small electronic devices like semiconductors, where quantum effects (like particle tunnelling through potential barriers and built-up in quantum wells) take place, is considered in the present paper, and the recent progress on well-posedness, stability analysis, and small scaling limits are reviewed.The multi-dimensional quantum hydrodynamic equations for charge transport in ultra-small electronic devices like semiconductors, where quantum effects (like particle tunnelling through potential barriers and built-up in quantum wells) take place, is considered in the present paper, and the recent progress on well-posedness, stability analysis, and small scaling limits are reviewed.
关 键 词:quantum hydrodynamics WELL-POSEDNESS longtime behavior small scale limit
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