在图像传感器和存储产品中应用硅通孔工艺的300mm光刻与键合技术(英文)  

300mm Lithography and Bonding Technologies for TSV Applications in Image Sensor and Memory Products

作　　者：Margarete Zoberbier Stefan Lutter Marc Hennemeyer Dr.-Ing. Barbara Neubert Ralph Zoberbier 

机构地区：[1]SUSS MicroTec Lithography,Schleissheimerstr. 90, 85748 Garching,Germany

出　　处：《电子工业专用设备》2009年第6期29-35,共7页Equipment for Electronic Products Manufacturing

摘　　要：三维集成的技术优势正在延伸到大量销售的诸如消费类电子设备潜在应用的产品领域。这些新技术也在推进着当前许多生产工艺的包封能力,其中包括光刻工艺和晶圆键合。> 还需要涂胶,形成图形和刻蚀图形结构。研究了一些用于三维封装的光刻和晶圆键合技术问题并将叙述全部的挑战和适用的解决方案。技术方面的处理结果将通过晶圆键合和光刻工序一起讨论。Technology advances such as 3-D Integration are expanding the potential applications of products into mass markets such as consumer electronics.〈These new technologies are also pushing the envelope of what＇ scurrently possible for many production processes, including lithography processes and wafer bonding.There is still the need to coat, pattern and etch structures. This paper will explore some of the lithographic challenges and wafer bonding techniques as used in the 3D Packaging and will describe all the challenges and available solutions. The processing issues encountered in those techniques will be discussed with a focus on wafer bonding and lithography steps.

关 键 词：三维集成 硅通孔技术(TSV) 圆片级封装 键合对准 硅熔焊 铜-铜键合 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]