氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响  

Effect of Argon Ion Bombardment on Formation of 6H SiC Prepared by Annealing of RF Sputtering a SiC∶H Film

作　　者：王辉耀[1,2,3] 王印月[1,2,3] 宋青 王天民[1,2,3] 

机构地区：[1]兰州大学材料科学系 [2]兰州大学物理系 [3]兰州铁道学院基础部

出　　处：《Journal of Semiconductors》1998年第8期569-573,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文对射频溅射法淀积的ａ－ＳｉＣ∶Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究．我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程．在较高的射频功率下淀积的ａ－ＳｉＣ∶Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ∶Ｈ形成６Ｈ－ＳｉＣ的温度（１０００℃）．高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击可使膜中氢含量减少及各组分均相．通过改变射频功率，本文研究了氩离子轰击对ａ－ＳｉＣ∶Ｈ膜及形成６Ｈ－ＳｉＣ的影响．Abstract The formation of 6H SiC phase is studied through the annealing of a SiC∶H films prepared by reactive r.f. sputtering method. The infrared transmission, Raman scattering and X ray diffraction spectra were used to characterize the composition and structure of films. After an isochronal annealing for 60min, a SiC∶H films deposited at higher r.f. power were changed into the 6H SiC phase at 800℃, while 1000 ℃ was required for the phase change of those deposited at lower power. High power causes the decrease of the 6H SiC formation temperature and the disappearance of silicon or carbon cluster existed in the films. The bombardment of energetic argon ion leads to the decrease of hydrogen content and the homogenity of the films. This enhancement of the 6H SiC formation is discussed in connection with the effect of argon ion bombardment through r.f. power variation on a SiC∶H films.

关 键 词：硅化碳 氩离子轰击 退火 射频溅射法 

分 类 号：TN304.24[电子电信—物理电子学]