K/GaAs(100)表面的氮化  

NITRIDATION OF K/GaAs(100) SURFACES

作　　者：胡海天[1] 来冰[1] 袁泽亮[1] 丁训民[1] 侯晓远[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室

出　　处：《物理学报》1998年第6期1041-1046,共6页Acta Physica Sinica

基　　金：国家自然科学基金;上海市科学技术委员会资助

摘　　要：Ｋ吸附层的存在能促进ＧａＡｓ（１００）表面在室温下的氮化．光电发射测量为此提供了证据．在将Ｋ／ＧａＡｓ（１００）暴露于纯氮以后，价带和芯能级谱均会出现显著变化：功函数有一定程度回升，价带谱中显露Ｎ２ｐ峰，Ｇａ２ｐ和Ａｓ２ｐ芯能级谱中产生化学位移分量．就所研究的三种不同的Ｋ覆盖度（１／４，１／２和１ＭＬ）而言，１ＭＬ的那种显示了最强的促进作用．Abstract Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect.

关 键 词：价带 芯能级谱 钾吸附层 砷化镓 表面氮化 

分 类 号：TN305.2[电子电信—物理电子学] TN304.23