电容耦合三结单电子晶体管特性分析  

Analysis of Capacitance Coupled Three Junction Single Electron Transistor Characteristics

作　　者：童明照[1] 蒋建飞[1] 蔡琪玉[1] 

机构地区：[1]上海交通大学微电子研究所

出　　处：《Journal of Semiconductors》1998年第8期603-608,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文基于电容耦合多个纳米隧道结串联结构的半经典模型，研究了三结单电子晶体管的基本方程，分析了其Ｉ－Ｖ特性，并对三结与两结单电子晶体管的特性进行了比较．结果表明，单电子晶体管的特性与常规晶体管有很大的差别，且三结单电子晶体管与两结单电子晶体管相比较。Abstract On the basis of semiclassical model for capacitance coupled nanometer tunneling junction array(NTJA), we study the basic equations for three junction single electron transistor (SET) and its I V characteristics, compare it with two junction SET. Our results indicate obvious differences between the characteristics of SETs and conventional transistor. Three junction SETs seem to have higher sensitivity and be able to resist stronger electromagnetic disturbance.

关 键 词：电容耦合 三结 晶体管 单电子晶体管 

分 类 号：TN32[电子电信—物理电子学]