IC缺陷轮廓的盒维数及其方向的分布特征  

Distribution Characterizations of Box Counting Dimension and Orientation of IC Defect Outlines

作　　者：姜晓鸿[1] 郝跃[1] 徐国华 

机构地区：[1]西安电子科技大学微电子研究所

出　　处：《Journal of Semiconductors》1998年第8期625-630,共6页半导体学报（英文版）

基　　金：863高科技项目;军事预研项目资助

摘　　要：为了对ＩＣ进行有效的成品率预报及故障分析，硅片表面与光刻有关的缺陷通常被假设为圆形的或方形的，然而，真实缺陷的形貌是多种多样的．本文对真实缺陷轮廓的盒维数及其描述真实缺陷方向的最小尺寸的方向角θｍｉｎ的分布进行了检验．Abstract For efficient yield prediction and inductive fault analysis of integrated circuits (IC), it is usually assumed that defects related to the photolithographic of wafer surface have the shape of circular discs or squares. Real defects, however, exhibit a great variety of different shapes. The distributions of real defect's box counting dimension and real defect's orientation defined as the angle θ min where the defect reachs its minimum extension are tested. The conclusion obtained in this paper lay the fountation for the fine characterization and computer simulation of real defects related to the photolithographic of wafer surface.

关 键 词：IC 缺陷轮廓 设计 盒维数 

分 类 号：TN402[电子电信—微电子学与固体电子学]