0.25μm介质栅与非介质栅PHEMT的性能比较分析  

Analysis of Performance of 0.25 μm Dielectric Defined Gate and Normal Process Gate PHEMTs

作　　者：付兴昌[1] 罗希[1] 崔玉兴[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第7期658-660,共3页Semiconductor Technology

摘　　要：为提高PHEMT性能,从改进PHEMT结构出发,采用介质栅器件结构,研制了0.25μm介质栅PHEMT器件,并与Win公司生产的0.25μm非介质栅器件的频率特性、开态击穿和功率特性进行了比较。介质栅器件选用了合适的栅凹槽的宽度和掺杂浓度,提高了开态击穿电压。这意味着可以在更高的电压下稳定的工作而不被烧毁。0.25μm介质栅器件的截止频率达到19GHz,开态击穿电压超过11V,功率密度超过1W/mm,表现出了较非介质栅器件更为优异的功率性能。最后分析了介质栅器件的优势和有待改进的方向,优化器件栅凹槽形貌,调整栅帽下面介质的厚度,使用双场板结构等可以进一步提升器件性能。To improve the performance of PHEMT device, the dielectric defined gate structure was adopted in 0.25 μm PHEMT process. In comparison with devices fabricated by normal gate process, the dielectric defined gate devices show advantages in on-state breakdown, power performance. The device adopts optimized gate recess width and doping, thus on-state breakdown is improved. Therefore, the device could operate at higher voltage without burnout. The characteristic frequency of 0.25 μm is 19 GHz, on-state breakdown exceed 11 V and power density is over 1 W/mm. The high performance was analyzed and possible improvement was discussed. Adopting optimum gate recess profile, c cap and exploiting double field plate structure may help device have hanging thickness of dielectric under gate a better performance.

关 键 词：赝配高电子迁移率晶体管器件 开态击穿 负载牵引 介质栅 双场板 

分 类 号：TN323.4[电子电信—物理电子学]