一种低温共烧AlN陶瓷基片的排胶技术  

A Technique of Burn-out for Low Temperature Cofired AlN Multilayer Substrates

作　　者：吴音[1] 周和平[1] 刘耀诚[1] 缪卫国[1] 

机构地区：[1]清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《无机材料学报》1998年第3期396-400,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金!69391201-2

摘　　要：介绍一种由高热导率AlN陶瓷和金属W共烧制备低温AlN陶瓷基片的排胶技术．研究了排胶过程中残余碳对AlN陶瓷基片相组成、烧结特性和微观结构的影响．结果表明：两步排胶法可以较好地解决W氧化及AlN陶瓷颗粒表面吸附残余碳的问题．A technique of burn-out for low temperature cofired AlN multilayer substrates was introduced,which consist of high thermal conductivity AlN ceramics and metal W. The effect of the evolutionof carbon during burn-out on AlN sintering characteristics and microstructure was studied. Theresults showed that two-step burn-out process may solve the contradiction between W oxidationand residual carbon.

关 键 词：陶瓷 低温共烧 排胶 氮化铝陶瓷 烧成 

分 类 号：TQ174.758[化学工程—陶瓷工业] TQ174.652[化学工程—硅酸盐工业]