电荷耦合器件消拖影后非线性测定  

Research on the Nonlinearity of Charge Coupled Device after Smear

作　　者：韩采芹[1] 郑舸[1] 

机构地区：[1]四川理工学院机械工程学院,四川自贡643000

出　　处：《光机电信息》2009年第6期33-35,共3页OME Information

摘　　要：随着电荷耦合器件(CCD)技术的迅速发展,CCD在光度检测中的应用越来越为人们所关注,如在CCD图像传感系统中,直接运用CCD列阵作为光电探测器件,测试光学系统及CCD成像系统的调制传递函数,其关键之一在于CCD光探测器的非线性。然而,CCD采集的图像都具有拖影。为了测量CCD芯片的非线性,提出一种定量测量CCD芯片响应非线性的实验方法,通过实验获得探测器输出信号与光照度数据,对图像进行消拖影;进而进行曲线拟合,得到了CCD芯片的响应非线性曲线。With the rapid development of charge coupled device （CCD） technology, more and more attention was paid to the application of CCD to photometric measurement.Such as CCD arrays were used to test the modulation transfer function of optical systems and CCD imaging systems in the CCD image sensing systems, in which one of the key problems was the nonlinearity of CCD detectors.However, the CCD acquisition images had smear.In order to measure the nonlinearity of CCD chips, a quantitatively measuring method was presented. The output signals and the illumination data of detectors were acquired through experiments to remove the image smear, then the curve was fitted to plot the respond nonlinearity graph of CCD chips.

关 键 词：电荷耦合器件 非线性 拖影 

分 类 号：TN386.5[电子电信—物理电子学]