Design of CMOS class-E power amplifier for low power applications  

低输出功率应用的E类CMOS功率放大器设计(英文)

作　　者：袁成[1] 李智群[1] 刘继华[1] 王志功[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《Journal of Southeast University(English Edition)》2009年第2期180-184,共5页东南大学学报（英文版）

基　　金：The National High Technology Research and Development Program of China(863 Program)(No.2007AA01Z2A7)

摘　　要：A fully integrated class-E power amplifier（PA） at 2.4 GHz implemented in a 0. 18 μm 6-metal-layer mixed/RF CMOS （ complementary metal-oxide-semiconductor transistor ） technology is presented. A two-stage amplification structure is chosen for this PA. The driving stage produces a high swing switch signal by using resonation technology. The output stage is designed as a class-E topology to realize the power amplification. Under a 1.2 V power supply, the PA delivers a maximum output power of 8. 8 dBm with a power-added efficiency （PAE） of 44%. A new power control method for the class-E power amplifier is described. By changing the amplitude and duty cycle of the signal which enters the class-E switch transistor, the output power can be covered from - 3 to 8. 8 dBm through a three-bit control word. The proposed PA can be used in low power applications, such as wireless sensor networks and biotelemetry systems.利用标准的0.18μm6层金属混合信号/射频CMOS工艺设计了一种工作在2.4GHz频段的全集成E类功率放大器.电路采用两级放大器级联结构,其中驱动级利用谐振技术生成高摆幅开关信号;输出级采用E类结构实现了信号的功率放大.在1.2V电源电压下,设计的功率放大器最高输出功率为8.8dBm,功率附加效率(PAE)达到44%.同时,提出了一种E类功率放大器功率控制方法.通过改变进入E类开关晶体管的信号幅度和占空比,在3位数字控制字的控制下,输出功率达到-3～8.8dBm.所设计的功率放大器可以满足诸如无线传感网络(WSN)和生物遥测等低功率系统的应用.

关 键 词：class-E power amplifier complementary metal-oxidesemiconductor transistor（CMOS） technology low power application 

分 类 号：TN402[电子电信—微电子学与固体电子学]