Ⅱ-Ⅵ族半导体纳米晶体的掺杂研究进展  

Research Progress of Ⅱ-Ⅵ Group Semiconductor Nanocrystals Doping

作　　者：王醉[1,2] 马锡英[2] 宋经纬[2] 陈中平[2] 杨爱国[2] 姚江宏[1] 

机构地区：[1]南开大学物理科学与技术学院,天津300071 [2]绍兴文理学院光电材料研究所,浙江绍兴312000

出　　处：《微纳电子技术》2009年第7期404-409,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60776004);浙江省新苗计划项目(2008R40G2180006)

摘　　要：介绍了Ⅱ-Ⅵ族半导体纳米晶体的掺杂技术和几种典型的掺杂工艺;综述了掺杂对半导体纳米晶体的光、电特性的影响;列举了近几年掺杂技术取得的研究成果;重点阐述了现阶段利用胶体法进行半导体纳米晶体掺杂的掺杂机理、以及掺杂效率所存在的问题。引进新型掺杂理论——动力学理论,该模型忽略了扩散作用的影响,重点讨论杂质在纳米晶体表面的驻留情况,可以有效解释Ⅱ-Ⅵ族纳米半导体的掺杂机理,提高掺杂浓度。最后,对其未来的发展方向进行了展望,指出开创新型掺杂理论、研发实用化掺杂工艺以及拓展应用领域是未来Ⅱ-Ⅵ族纳米半导体的主要研究方向。Some typical doping methods and technics of Ⅱ-Ⅵ group semiconductor nanocrystals are presented.The effects of doping on the optical and electronic characteristics of the semiconductor nanocrystals are reviewed,and the successful researches of doping technologies in recent years are presented.The doping theories and addressed some questions in the doping process of nanocrystals are desribed.A new doping theory which is a simple model of doping based on kinetics is given,in which diffusion is negligible but the surface situation of nanocrystals in doping process is more important.By the model,the diping theories of Ⅱ-Ⅵ group semiconductor nanocrystals can be proved effectively and the doping efficiency is increased.At last,the deve-lopment of Ⅱ-Ⅵ group semiconductor nanocrystals is described and it is pointed that new doping theory,more practical doping technics and applications will be the leading research in the future.

关 键 词：半导体纳米晶体 掺杂 光电特性 胶体法 掺杂机制 

分 类 号：TN383[电子电信—物理电子学] TN304.25