PbSe纳米晶薄膜制备以及其光电特性研究  

Low-cost Preparation and Photoelectric Property Study of PbSe Nanocrystalline Films

作　　者：周凤玲[1,2] 李效民[1] 高相东[1] 邱继军[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050 [2]中国科学院研究生院,北京100049

出　　处：《无机材料学报》2009年第4期778-782,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(10576036)

摘　　要：以Pb(Ac)2、Na2SeSO3分别作为铅源和硒源,采用化学浴法在玻璃衬底上沉积PbSe纳米晶薄膜.采用X射线衍射(XRD),扫描电镜(SEM),原子力显微镜(AFM),透射光谱以及在光脉冲下的电流-时间曲线(i-t)对纳米薄膜材料结构和性能进行了表征.结果表明,薄膜的结晶质量随络合剂浓度升高而提高,薄膜的光学吸收边从体材料的5μm蓝移至1μm左右,经过退火处理薄膜吸收边红移.退火处理引起薄膜电阻显著降低,i-t测试曲线表明经过较低氧压退火处理的纳米晶薄膜具有较快的光电导性能,而在空气气氛中退火的薄膜则出现慢光电导性能.PbSe nanocrystalline films were deposited on glass substrates by chemical bath using the Pb（Ac）2 solution and Na2SeSO3 solution as the reactants.Effect of the concentration of complexing agent （[OH^-]） in the chemical bath on the crystal structure,morphology and electricoptical property of the film were investigated.The results indicate that crystal size of the film is about 10nm which is correlated with the complexing agent concentration.With low concentration of [OH^-],the film is uniform and compact,whereas it becomes loose and discontinuous with high concentration of [OH^-].Optical transmission spectra show a blue shift of the absorption edge from 5μm to 1μm in the asgrown films,and the absorption edge moves to longer wavelength after annealing at 300℃.The as-grown film shows a huge sheet resistant （〉10GΩ）,and the sheet resistant obviously decrease to 10kΩ～100MΩ after annealing in air and in oxygen.Electro-optical performance is studied by measuring the current vs time （i-t） curve at a signal of light pulse.The i-t curves indicate an obvious photoelectrical response in nanocrystalline films at the presence of light.The film annealed in air has a slow-electro-optical performance,whereas the film annealed in oxygen has a fast response.

关 键 词：PBSE 红外探测器 化学浴 纳米晶薄膜 

分 类 号：O472[理学—半导体物理]