Al掺杂ZnO薄膜的制备及其电学性能研究  

Preparation and Electric Properties of Aluminum-doped ZnO Thin Films

作　　者：张杨[1] 范树景[1] 王红英[1] 李国晶[1] 赵淑金[1] 

机构地区：[1]佳木斯大学材料科学与工程学院,佳木斯154007

出　　处：《材料导报（纳米与新材料专辑）》2009年第1期356-358,共3页

基　　金：黑龙江省自然科学基金（E2007-27）

摘　　要：采用溶胶-凝胶法在玻璃基底上制备掺杂铝的氧化锌薄膜。研究了不同的铝掺杂浓度、薄膜厚度以及退火温度对电阻率的影响，结果表明掺杂铝摩尔分数为2％、退火温度在550％时电阻率最低，电阻率随着薄膜厚度的增加而减小。通过XRD和SEM对薄膜的组织结构和形貌进行了表征，结果表明样品表面相对平整、致密，AZO薄膜保持着ZnO六角纤锌矿结构，说明了Al原子对Zn原子的有效替位。Al-doped ZnO thin films are prepared on glass substrates by sol-gel method, the effect of different Al content, film thickness and annealing temperature on resistivity are discussed, the resistivity decreased with increase of thickness. The results indicate that a minimum resistivity for the film is obtained doping with 20/00 Al, and annealing at 550℃. The thin films are characterized by scanning electron microscopy and X-ray diffraction. The results prove that the samples are smooth and compact, the AZO thin films has the same crystalline phase as hexagonal wurtzite,that means Al^3＋ displaces Zn^2＋ effectively.

关 键 词：AZO薄膜 溶胶-凝胶法 电学性能 

分 类 号：O484[理学—固体物理]