Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si  

作　　者：陈贵锋 阎文博 陈洪建 崔会英 李养贤 

机构地区：[1]School of Material Science and Engineering,Hebei University of Technology

出　　处：《Chinese Physics B》2009年第7期2988-2991,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 50872028);Natural Science Foundation of Hebei Province of China (Grant Nos E200500048 and E2008000079);Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050080006)

摘　　要：This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron （1.5 MeV） at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [Oi] = 1.06 x 10^18 cm^-3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃,accompanied with the appearing of VO3. For both kinds of specimens,the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron （1.5 MeV） at 360 K.Two groups of samples with low [Oi] = 6.9 x 10^17 cm^-3 and high [Oi] = 1.06 x 10^18 cm^-3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at 500 ℃,accompanied with the appearing of VO3. For both kinds of specimens,the concentration of VO3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.

关 键 词：electron irradiation CZ-SI defect complex annealing processes 

分 类 号：TN304.2[电子电信—物理电子学]