电子与硅烷分子碰撞的散射截面对微晶硅生长影响  

Influence of e-silane cross-section on microcrystalline silicon thin film growth

作　　者：文书堂[1,2] 姚鹏[1,2] 卢景霄[2] 李云居[2,3] 李维强[2] 魏长春[4] 谷锦华[2] 杨仕俄[2] 郭学军[2] 高哲[2] 赵尚丽[2] 

机构地区：[1]新乡学院化学与化工学院 [2]郑州大学材料物理教育部重点实验室 [3]中国原子能科学研究院,北京,102413 [4]南开大学光电子所

出　　处：《四川大学学报（自然科学版）》2009年第4期1101-1106,共6页Journal of Sichuan University(Natural Science Edition)

基　　金：国家重点基础研究发展计划(973)项目(2006CB202601);河南省自然科学基金(072300410080)

摘　　要：较为系统的研究了甚高频化学气相沉积在高压高功率下生长的微晶硅薄膜.给出了功率密度-气体流量和压强-功率密度的二维相图.用朗缪尔探针测出薄膜沉积时等离子体内部电子温度,并用麦克斯韦-玻尔兹曼分布进行拟合给出电子能量分布函数.由电子能量分布函数出发通过单电子碰撞模型给出等离子体内部各种基浓度的计算公式.并通过数值模拟给出等离子体中 SiH_2,SiH_3等基的浓度.利用 SiH_2与 SiH_3比值,结合表面扩散模型,解释气压-功率密度相图中随电子温度的增加(功率的增加),晶化率增大的现象.The microcrystalline silicon thin films were prepared by VHF-PECVD and studied by several diagnostic techniques. The deposition rate and Raman crystallinity were mapping onto a pressure-power density plane. The electron temperature was measured by Langmuir probe inserted into the plasma, and then the electron energy distribution function was obtained through Maxwell-Bohzmann fit. The radical densities were calculated via the one-electron impact model given by Matsuda A. The E-silane collision was modeled by an addition rule to obtain the total cross section proposed by Sun J F. By introducing the probability of electron-silane molecule collision, the expanded surface diffusion model was used to explain the increase of Raman crystallinity with the increasing power density, which has been believed to lead to a high electron temperature and is detrimental to film crystallinity. Another novel phenomenon is that the electron densities corresponding for both SiH3 and SiH2 decrease with the increasing pressure, although the total electron density increases. To explain this result, the probability of electron-silane collision can not be neglected.

关 键 词：甚高频化学气相沉积 微晶硅薄膜 散射截面 高速生长 

分 类 号：TN304.055[电子电信—物理电子学]