低栅极电压控制下带有phenyltrimethoxysilane单分子自组装层的有机薄膜晶体管场效应特性研究  

Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage

作　　者：袁广才[1,2] 徐征[1,2] 赵谡玲[1,2] 张福俊[1,2] 许娜[3] 孙钦军[1,2] 徐叙瑢[1,2] 

机构地区：[1]北京交通大学光电子技术研究所,北京100044 [2]北京交通大学发光与光信息技术教育部重点实验室,北京100044 [3]北京交通大学理学院,北京100044

出　　处：《物理学报》2009年第7期4941-4947,共7页Acta Physica Sinica

基　　金：国家高技术研究发展计划(863)项目(批准号:2006AA03Z0412);国家自然科学基金(批准号:10774013;60576016);北京交通大学优秀博士生科技创新基金(批准号:48024);教育部博士点基金(批准号:20070004024);博士点新教师基金(批准号:20070004031);北京市科技新星计划(批准号:2007A024);教育部留学回国科研启动基金和校基金(批准号:2005SM057)资助的课题~~

摘　　要：制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO2作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane(OTS),phenyltrimethoxysilane(PhTMS),来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|VGS|<0.1 V时,载流子在如此小的栅极电压调制下已经不能过多在半导体有源层与栅极绝缘层之间的界面处积聚,使OTFTs器件的输出电流保持相对的平衡.但是,器件的调制栅压在-0.001V时,器件仍然有好的输出特性,当VDS为-20 V时,器件的场效应迁移率为3.22×10-3cm2/Vs,开关电流比为1.43×102,阈值电压为0.66 V.We have fabricated the top-contact organic thin film transistors （OTFTs） with, a 60 nm thick pentacene films as active layer and a 120 nm thermal growth SiO2 as gate insulator. Through using different self-assembled monolayers , such as octadecyhrichlorosilane （OTS） and phenyhrimethoxysilane （PhTMS）, as a buffer between the organic semiconductor active layer and gate insulator, we studied the effect of different buffers on the performance of OTFTs device. At the same time, we also investigated the field-effect behavior and carrier transport mechanism of OTFTs device with PhTMS buffer under low gate modulation voltage. When ｜ VGS ｜ 〈 0.1 V we found that under such low gate modulation voltage the carriers can no more accumulate at the interface between the organic semiconductor active layer and gate insulator, resulting in the output current IDS of OTFTs device keeping balance. But the OTFF device still has good output characteristics, with the field-effect mobility （μET） of 3.22 x 10^-3 cm^2/Vs, （on/off） current ratio of 1.43 × 10^2 , and threshold voltage （VTs） of - 0.66 V.

关 键 词：有机薄膜晶体管 自组装单分子层 场效应迁移率 低栅极调制电压 

分 类 号：O484.42[理学—固体物理]