择优取向MgO在Si衬底上的直流溅射制备及其性能表征  

Fabrication and properties of (100) oriented MgO by DC sputtering on Si substrate

作　　者：傅兴海[1] 尹伊[1] 张磊[1] 叶辉[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,杭州310027

出　　处：《物理学报》2009年第7期5007-5012,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60578012);浙江省自然科学基金(批准号:X405002)资助的课题~~

摘　　要：采用直流磁控溅射并通过优化工艺参数,在(100)Si衬底上成功制备了高度(100)择优的MgO薄膜和MgO/TiN双层膜结构.对(100)MgO择优取向温度影响机理做了详细讨论,并利用XRD,AFM,FESEM等手段研究了在(100)Si和(100)TiN/Si两种衬底上,不同工艺条件下MgO薄膜的表面和断面微观结构,表征了MgO薄膜的柱状生长结构和与TiN薄膜的良好外延关系.在对薄膜光学特性的研究中,利用Sellmeier模型获得了Si上MgO薄膜在可见光波段的折射率参数(550 nm处折射率为1.692),利用非均匀模型获得了TiN/Si衬底上的MgO薄膜在可见光波段的折射率参数(靠近空气层的薄膜在550nm处折射率为1.716).MgO film was fabricated on （100） Si substrates with DC sputtering method, （100） highly preferred oriented MgO film and MgO/TiN bi-buffer layers were successfully obtained by optimizing the preparation parameters, and the preferred （100） orientation mechanism affected by temperature was also discussed in the paper. XRD, AFM, FESEM were used to investigate the crystalline orientation, surface morphology, as well as the cross-section morphology of MgO films deposited on substrates with and without buffer layers. Columnar structure of MgO film and a good epitaxial relationship between MgO and TiN films were shown in our samples. Refractive index of MgO film on Si was fitted with Sellmeier model in the visible wavelength range （ 1. 692 @ 550 nm）, while on TiN/Si substrate, the refractive index was calculated to be 1.716 @ 550 nm （where part of the layer approaches to the air） with the help of an inhomogeneous model.

关 键 词：MgO薄膜 择优取向 直流溅射 折射率拟合 

分 类 号：O484.1[理学—固体物理]