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作 者:宋斌斌[1] 吴平[1] 周多文[1] 闫丹[1] 赵以德[1] 赵守田[1] 张师平[1] 陈森[1]
出 处:《核技术》2009年第7期521-524,共4页Nuclear Techniques
摘 要:本文采用射频磁控溅射法在不同氧氩比下制备氧化铪涂层。研究了涂层的沉积速率、表面形貌、微观结构和电绝缘特性随氧氩比的变化。结果表明用此方法在低活化马氏体钢上制备的氧化铪涂层表面致密、无明显孔洞;低活化马氏体钢为衬底时涂层较易结晶为以单斜相为主的晶体结构;且涂层的绝缘特性受氧氩比影响较大,氧氩比为0.7和1.2下制备的涂层击穿场强小于1MV/cm,电绝缘特性较差,在较低氧氩比下制备的涂层有较理想的绝缘性能。Hafnium oxide coatings were prepared at various O2/Ar flow ratios by RF(radio frequency) magnetron sputtering on low activation Martensitic steel. The effects of O2/Ar flow ratio on the deposition rate and the properties of HfO2 are studied. The results show that the deposition rate decreases with increasing the O2/Ar flow ratio. Moreover, the coatings prepared at various O2/Ar flow ratios are compact and the main phase of the coatings is monoclinic. Additionally the coatings prepared at the O2/Ar ratios 0.7 and 1.2 were broken down under 1 MV/cm and show poor electrical insulation properties, while the coatings prepared at smaller O2/Ar flow ratios show better electrical insulation properties.
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